Beijing, China

Xinlv Duan

This inventor holds 1 USPTO granted patent and 8 published patent applications. Top assignee: Chinese Academy of Sciences. Active years: 2025.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Xinlv Duan in Pressure Sensor Technology

Introduction

Xinlv Duan is a notable inventor based in Beijing, China. He has made significant contributions to the field of pressure sensor technology. His innovative work focuses on utilizing zinc oxide nanowires to enhance the performance of pressure sensors.

Latest Patents

Xinlv Duan holds a patent for a "Pressure sensor based on zinc oxide nanowires and method of manufacturing pressure sensor." This invention provides a novel approach to manufacturing pressure sensors. The method includes several steps: manufacturing a bottom electrode on a substrate, creating a seed layer on the bottom electrode, forming a zinc oxide nanowire layer on the seed layer, adding a support layer on the zinc oxide nanowire layer, and finally, manufacturing a top electrode on the support layer. This innovative process aims to improve the sensitivity and efficiency of pressure sensors.

Career Highlights

Xinlv Duan is affiliated with the Chinese Academy of Sciences, where he conducts research and development in advanced sensor technologies. His work has garnered attention for its potential applications in various industries, including healthcare and environmental monitoring.

Collaborations

Some of his notable coworkers include Nianduan Lu and Ming Liu. Their collaborative efforts contribute to the advancement of research in sensor technology.

Conclusion

Xinlv Duan's contributions to pressure sensor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to inspire future developments in sensor applications.

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