The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Oct. 26, 2020
Applicant:
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Inventors:
Ling Li, Beijing, CN;
Xuewen Shi, Beijing, CN;
Nianduan Lu, Beijing, CN;
Congyan Lu, Beijing, CN;
Di Geng, Beijing, CN;
Xinlv Duan, Beijing, CN;
Ming Liu, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 30/074 (2023.01); B82Y 40/00 (2011.01); G01L 1/16 (2006.01); H10D 30/67 (2025.01); H10N 30/067 (2023.01); H10N 39/00 (2023.01);
U.S. Cl.
CPC ...
H10N 30/074 (2023.02); B82Y 40/00 (2013.01); G01L 1/16 (2013.01); H10D 30/67 (2025.01); H10N 30/067 (2023.02); H10N 39/00 (2023.02);
Abstract
A pressure sensor based on zinc oxide nanowires and a method of manufacturing a pressure sensor based on zinc oxide nanowires are provided. The manufacturing method includes: manufacturing a bottom electrode on a substrate; manufacturing a seed layer on the bottom electrode; manufacturing a zinc oxide nanowire layer on the seed layer; manufacturing a support layer on the zinc oxide nanowire layer; and manufacturing a top electrode on the support layer.