Company Filing History:
Years Active: 2022
Title: Xinhua Cheng: Innovator in Semiconductor Technology
Introduction
Xinhua Cheng is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming gate oxide films in transistor devices. His innovative approach has the potential to enhance the performance and reliability of electronic devices.
Latest Patents
Xinhua Cheng holds a patent for a method titled "Method for forming gate oxide." This method involves several steps, including the formation of a hard mask layer on a semiconductor substrate, etching to create shallow trenches, and performing tilt-angle ion implantation. The process culminates in thermal oxidation to form a gate oxide film, which improves the morphology of the film and increases the breakdown voltage threshold and reliability of the device. He has 1 patent to his name.
Career Highlights
Cheng is currently employed at Shanghai Huali Integrated Circuit Corporation, where he continues to work on advancing semiconductor technologies. His expertise in the field has positioned him as a valuable asset to the company and the industry at large.
Collaborations
Xinhua Cheng collaborates with Jun Yin, a fellow innovator in the semiconductor sector. Their combined efforts contribute to the ongoing development of cutting-edge technologies in integrated circuits.
Conclusion
Xinhua Cheng's work in semiconductor technology exemplifies the spirit of innovation that drives advancements in the electronics industry. His contributions, particularly in the formation of gate oxide films, are paving the way for more reliable and efficient electronic devices.