The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2022
Filed:
Jan. 13, 2021
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Xinhua Cheng, Shanghai, CN;
Jun Yin, Shanghai, CN;
SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION, Shanghai, CN;
Abstract
A method for forming a gate oxide film of a transistor device includes: step 1: forming a hard mask layer on the surface of a semiconductor substrate, etching the hard mask layer and the semiconductor substrate to form shallow trenches; step 2: performing an tilt-angle ion implantation to the upper area of the side surfaces of each shallow trench to form an upper doped region; step 3: filling a field oxide layer into the shallow trenches and removing the hard mask layer; and step 4: performing thermal oxidation to form a gate oxide film on the surface of an active region. The method can improve the morphology of the gate oxide film, thus increase the breakdown voltage threshold and reliability of the device.