Xingye Wang

Title: Innovations of Xingye Wang in Silicon Nitride Films

Introduction

Xingye Wang is an accomplished inventor based in Gilbert, AZ (US). She has made significant contributions to the field of materials science, particularly in the development of doped silicon nitride films. Her innovative work has led to the filing of a patent that showcases her expertise and creativity in this area.

Latest Patents

Xingye Wang holds a patent for "Methods and systems for forming doped silicon nitride films." This patent describes a method of forming a doped silicon nitride film on a substrate's surface. The disclosed methods include forming a layer comprising silicon nitride using a first thermal process and subsequently forming a layer of doped silicon nitride using a second thermal process. This innovative approach results in the creation of a high-quality doped silicon nitride film, which has various applications in the semiconductor industry.

Career Highlights

Xingye Wang is currently employed at ASM IP Holding B.V., where she continues to push the boundaries of innovation in her field. Her work has not only contributed to her company's success but has also advanced the understanding of silicon nitride materials in various applications.

Collaborations

Xingye has collaborated with notable colleagues, including Fu Tang and Eric Jen Cheng Liu. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Xingye Wang's contributions to the field of doped silicon nitride films exemplify her innovative spirit and dedication to advancing materials science. Her patent and ongoing work at ASM IP Holding B.V. highlight her role as a leading inventor in this important area of technology.