The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Oct. 24, 2022
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Xingye Wang, Gilbert, AZ (US);
Fu Tang, Gilbert, AZ (US);
Eric Jen Cheng Liu, Tempe, AZ (US);
Peijun Jerry Chen, Phoenix, AZ (US);
Youngchol Byun, Tempe, AZ (US);
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/34 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/345 (2013.01); C23C 16/45527 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01); H01L 21/02312 (2013.01); H01L 21/02491 (2013.01);
Abstract
A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.