Xingmei Yang

Title: Innovations by Xingmei Yang

Introduction

Xingmei Yang is a notable inventor based in Shanghai, China. He has made significant contributions to the field of integrated circuits, particularly in the monitoring of gate oxide thickness. His innovative approach has the potential to enhance the accuracy of semiconductor manufacturing processes.

Latest Patents

Xingmei Yang holds a patent for a method titled "Method for Monitoring Gate Oxide Thickness." This patent describes a technique that involves providing a device structure with a gate structure, a gate oxide layer, source and drain regions, and a base region. The method includes applying a voltage to the gate structure to form an accumulation layer, applying a small AC voltage, grounding the source and drain regions, and obtaining the capacitance between the gate structure and the base region. The thickness of the gate oxide layer is then calculated using a specific formula. This technique effectively monitors the thickness of the gate oxide layer while minimizing errors associated with existing methods. He has 1 patent to his name.

Career Highlights

Xingmei Yang is currently employed at Shanghai Huali Integrated Circuit Corporation. His work at this company has allowed him to focus on advancements in integrated circuit technology. His innovative methods have contributed to the company's reputation in the semiconductor industry.

Collaborations

Xingmei has collaborated with notable colleagues such as Haibo Lei and Shenlong Xuan. Their teamwork has fostered an environment of innovation and has led to advancements in their respective fields.

Conclusion

Xingmei Yang's contributions to the field of integrated circuits, particularly through his patented method for monitoring gate oxide thickness, highlight his role as an influential inventor. His work continues to impact the semiconductor industry positively.