The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Jun. 29, 2023
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Haibo Lei, Shanghai, CN;
Xingmei Yang, Shanghai, CN;
Shenlong Xuan, Shanghai, CN;
Wei Liu, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application provides a method for monitoring a gate oxide thickness: providing a device structure comprising a gate structure, a gate oxide layer under the gate structure, source and drain regions and a base region; applying a voltage −Vdd on the gate structure so that an accumulation layer is formed between the source and drain regions, applying a small AC voltage on the basis of the gate voltage −Vdd; grounding the source and drain regions; applying a voltage signal close to 0 potential on the base region; obtaining the capacitance Cox between the gate structure and the base region by testing; and obtaining the thickness of a gate oxide layer according to the formula Tox=ε*S/Cox. This technique accurately monitors the thickness of the gate oxide layer, and avoids those errors caused by existing methods.