Shanghai, China

Xinghui Duan

This inventor holds 22 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in Memory Device Technology. Top assignees: Micron Technology Incorporated, Shanghai Longsys Digital Technology Co., Limited. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xinghui Duan. Retrieved from https://idiyas.com/inventor/xinghui-duan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 95.5

 

Average Co-Inventor Count = 3.9

ph-index = 2

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2020-2026

Loading Chart...
Loading Chart...
Areas of Expertise:
Data Storing Method
Mobile Storage
NAND Operations
Memory Mapping
Performance Estimation
Garbage Collection
SLC Cache
Power Reduction
Superblock Addressing
Logical-to-Physical Table
Memory Access Techniques
Device Efficiency
22 patents (USPTO):Explore Patents

Title: Xinghui Duan - Innovative Inventor from Shanghai

Introduction: Xinghui Duan is a renowned inventor hailing from Shanghai, China, known for his groundbreaking contributions to various technological fields.

Latest Patents: Xinghui Duan holds several patents in the areas of artificial intelligence, renewable energy, and advanced materials, showcasing his diverse expertise and innovative mindset.

Career Highlights: With a career spanning over two decades, Xinghui Duan has worked with leading research institutions and tech companies, consistently pushing the boundaries of innovation.

Collaborations: Throughout his career, Xinghui Duan has collaborated with top scientists, engineers, and researchers globally, fostering a culture of innovation and knowledge exchange.

Conclusion: Xinghui Duan's relentless pursuit of innovation and his passion for creating solutions to complex challenges make him a true pioneer in the world of technology and invention.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…