Xinghua Pu

Title: **Xinghua Pu: Innovator in Multidirectional Leakage Path Testing**

Introduction

Xinghua Pu is a notable inventor based in Shanghai, China, recognized for his significant contributions to the field of semiconductor technology. With one patent to his name, Pu has showcased his innovative thinking and technical skills in the development of advanced testing structures.

Latest Patents

Xinghua Pu holds a patent for a "Multidirectional Leakage Path Test Structure." This invention is crucial for testing multidirectional current leakage paths in semiconductor devices. The test structure involves a complex arrangement of doped regions within a substrate, including a first doped region of a first conductivity and a series of second doped regions of a second conductivity. The innovative design allows for effective testing through a partial overlap mechanism, thus enhancing the reliability of leakage path assessments.

Career Highlights

Xinghua Pu is currently employed at Grace Semiconductor Manufacturing Corporation, where his work revolves around advancing semiconductor manufacturing processes. His technical expertise in the creation of innovative testing structures has positioned him as an influential figure within his company.

Collaborations

During his career, Xinghua Pu has collaborated with talented professionals such as Mon-Chin Tsai and Ning Jiang. These collaborations have contributed to the advancement of mutual projects and the exchange of innovative ideas within the semiconductor industry.

Conclusion

Xinghua Pu's commitment to innovation in the field of semiconductor testing is evident through his patented work. His contributions not only enhance the performance and safety of electronic devices but also serve as a testament to his dedication to advancing technology within the industry. As he continues to work at Grace Semiconductor Manufacturing Corporation, Pu is sure to influence future developments in semiconductor technology.