Grace Semiconductor Manufacturing Corporation

Xinghua Pu

Jun He

Ning Jiang

Mon-Chin Tsai

A test structure for testing a multidirectional current leakage path. A first doped region of a first conductivity is in the first well of the first conductivity in a substrate, in which the first doped region has a dopant concentration higher than the first well has. A first contact is on the first doped region and contacts the first doped region. The first contact has first and second portions respectively parallel to the first and second directions. A plurality of second doped regions of a second conductivity are in the first well and isolated from the first doped region. In a third direction, the second regions are adjacent to each another and isolate the first portion from the second portion. A plurality of second contacts are on the second doped regions and each one is corresponding to each the second doped region. With a relative shift between the first contact and the second doped region, the partial overlap is used in the test of a multidirectional leakage path.

Growing community of inventors

Shanghai, China

Xinghua Pu