Shanghai, China

Xin Liang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2016-2019

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2 patents (USPTO):Explore Patents

Title: Innovations of Inventor Xin Liang

Introduction

Xin Liang is a prominent inventor based in Shanghai, China. He has made significant contributions to the fields of electronics and semiconductor technology. With a total of 2 patents, his work focuses on advanced fabrication methods and device registration systems.

Latest Patents

Xin Liang's latest patents include innovative technologies such as a capacitor and an image sensor circuit along with their fabrication methods. The first patent describes a method that involves providing a base substrate with a trench region and a body region. It details the formation of a first and second trench structure, as well as the creation of a dielectric layer and an electrode layer within the first trench structure. The second patent addresses device registration and sounding in a time-division multiple access network. This invention outlines a process where a master device transmits beacon messages to multiple slave devices, facilitating their registration and authentication.

Career Highlights

Throughout his career, Xin Liang has worked with notable companies such as Qualcomm Incorporated and Semiconductor Manufacturing International Corporation. His experience in these leading firms has allowed him to develop and refine his innovative ideas in the semiconductor industry.

Collaborations

Xin Liang has collaborated with talented individuals in his field, including Haipeng Wu and Patrick Tse. These partnerships have contributed to the advancement of his projects and innovations.

Conclusion

Xin Liang's contributions to technology through his patents and collaborations highlight his role as a significant inventor in the semiconductor industry. His work continues to influence advancements in electronics and device registration systems.

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