Qualcomm Incorporated

Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Xin Liang

Chong Wang

Haipeng Wu

Lihong Sun

Patrick Tse

A capacitor, an image sensor circuit and fabricating methods are provided. The method includes providing a base substrate including a trench region and a body region adjacent to the trench region. The method also includes forming a first trench structure and a second trench structure on the first trench structure, in the base substrate in the trench region. In addition, the method includes forming a dielectric layer on a sidewall surface and a bottom surface of the first trench structure and an electrode layer on the dielectric layer in the first trench structure. Further, the method includes forming an isolation layer filling the second trench structure.

Capacitor, image sensor circuit and fabrication methods thereof

A master device transmits beacon messages to a plurality of slave devices. The beacon messages specify upstream time slots, downstream time slots, and contention-based time slots. To register a respective slave device with the master device, the respective slave device transmits an association request to the master device during a contention-based time slot and receives an association response from the master device during a first downstream time slot. In response to receiving the association response, the respective slave device transmits an authentication request to the master device during an upstream time slot and receives an authentication response from the master device during a second downstream time slot.

Device registration and sounding in a time-division multiple access network

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Shanghai, China

Xin Liang