Beijing, China

Xiaoyang Ma


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2023

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2 patents (USPTO):Explore Patents

Title: Innovations of Xiaoyang Ma in Memory Devices

Introduction

Xiaoyang Ma is a prominent inventor based in Beijing, China. He has made significant contributions to the field of memory devices, holding two patents that showcase his innovative approach to technology. His work focuses on enhancing the performance and efficiency of memory systems.

Latest Patents

Xiaoyang Ma's latest patents include a memory device based on a ferroelectric capacitor. This invention features a control unit for writing and reading data from memory cells arranged in an array. Each memory cell incorporates a ferroelectric capacitor, allowing for non-destructive reading of data and improved endurance during write operations. Another notable patent is related to static random-access memory and an electronic device. This memory includes multiple storage circuits that enable high-concurrency data access and low power consumption, demonstrating Xiaoyang's commitment to advancing memory technology.

Career Highlights

Xiaoyang Ma is affiliated with Tsinghua University, where he continues to contribute to research and development in the field of memory devices. His work has garnered attention for its innovative solutions and practical applications in electronic devices.

Collaborations

Xiaoyang has collaborated with notable colleagues, including Xueqing Li and Yongpan Liu, to further enhance the impact of his research and inventions.

Conclusion

Xiaoyang Ma's contributions to memory technology through his patents reflect his dedication to innovation and excellence in the field. His work continues to influence advancements in electronic devices and memory systems.

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