Tsinghua University

Xiaoyang Ma

Huazhong Yang

Yongpan Liu

Xueqing Li

Yiming Chen

Juejian Wu

Xiyu He

Mufeng Zhou

Yushen Fu

Zhiyang Xing

The present disclosure relates to a memory device based on a ferroelectric capacitor, which includes a control unit for writing data into a memory cell or reading data from the memory cell and a plurality of memory cells arranged in an array; each memory cell includes an external interface, a first switch, a transistor, a first capacitor and a second capacitor, wherein at least one of the first capacitor and the second capacitor is a ferroelectric capacitor; the first switch has a first port connected with a first word line, a second port connected with a bit line, and a third port connected with one end of the first capacitor; and the transistor has a gate electrode connected with another end of the first capacitor and one end of the second capacitor, a source electrode connected with a first read terminal, and a drain electrode connected with a second read terminal, wherein another end of the second capacitor is connected with a second word line. According to the present disclosure, a polarized state of the ferroelectric capacitor in the memory cell is held or changed based on hysteresis characteristics of the ferroelectric capacitor, and the control unit is used to write data into or read data from the memory cell, which can implement non-destructive reading of data and longer endurance of a write operation.

Memory device based on ferroelectric capacitor

The present disclosure relates to a static random-access memory and an electronic device. The memory includes at least one storage circuit, wherein the storage circuit includes a first inverter, a second inverter, a first switch, a second switch, a third switch, a fourth switch, a fifth switch, a word-line, a first bit-line, a second bit-line, a shift-input line, and a shift-output line. The circuit is used to access data by using the first bit-line and/or the second bit-line when it works in a first mode, and the circuit is used to shift the input data to the shift-input line and output the shifted data through the shift-output line when it works in a second mode. By implementing shift-input and shift-output within the memory, the disclosed embodiment can achieve high-concurrency data access and data update, and it also enables high integration and low power consumption.

Static random-access memory and electronic device

Growing community of inventors

Beijing, China

Xiaoyang Ma