This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Innovations of Xiaoyang Liu in Magnetic Storage Technologies.
Introduction
Xiaoyang Liu is a prominent inventor based in Hefei, China. He has made significant contributions to the field of magnetic storage technologies. His innovative work has led to the development of advanced memory structures that enhance data storage capabilities.
Latest Patents
Xiaoyang Liu holds 1 patent for his invention titled "Magnetic storage structure, magnetic storage array structure and control method thereof, and memory." This patent provides a detailed description of a magnetic storage structure that includes two magnetic tunnel junctions, each comprising a fixed layer and a free layer. The invention also features spin-orbit coupling layers, transistors, and a control method that collectively improve the efficiency and functionality of magnetic storage systems.
Career Highlights
Xiaoyang Liu is currently employed at Changxin Memory Technologies, Inc., where he continues to push the boundaries of memory technology. His work at this company has positioned him as a key player in the development of innovative storage solutions.
Collaborations
Xiaoyang Liu collaborates with fellow inventor Xiaoguang Wang, contributing to advancements in their field through shared expertise and innovative ideas.
Conclusion
Xiaoyang Liu's contributions to magnetic storage technology exemplify the impact of innovative thinking in the field of memory solutions. His patent and ongoing work at Changxin Memory Technologies, Inc. highlight his role as a leading inventor in this important area of technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile