Shanghai, China

Xiaosong Yang

This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Manufacturing South China Corporation. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiaosong Yang. Retrieved from https://idiyas.com/inventor/xiaosong-yang-t892c887

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations by Xiaosong Yang in Semiconductor Technology

Introduction

Xiaosong Yang is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on improving overlay accuracy in manufacturing processes.

Latest Patents

Xiaosong Yang holds a patent for a "Compensation method for overlay deviation." This method involves obtaining first inspection distribution maps and performing iterations on wafers to develop a high-order overlay deviation model. The process includes inspecting multiple wafers and allocating inspection maps to enhance overlay accuracy.

Career Highlights

Xiaosong Yang is currently employed at Semiconductor Manufacturing South China Corporation. His work at this leading semiconductor company has allowed him to apply his innovative ideas in a practical setting. His contributions are vital for advancing manufacturing techniques in the semiconductor industry.

Collaborations

Xiaosong collaborates with talented coworkers, including Yimin Wu and Hai Zhang. Their teamwork fosters an environment of innovation and excellence in their projects.

Conclusion

Xiaosong Yang's contributions to semiconductor technology through his patent and work at Semiconductor Manufacturing South China Corporation highlight his role as an influential inventor. His innovative methods are paving the way for advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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