Hangzhou, China

Xiaoping Ouyang


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Xiaoping Ouyang in Transparent Material Stress Detection

Introduction

Xiaoping Ouyang is a notable inventor based in Hangzhou, China. He has made significant contributions to the field of material science, particularly in the detection of internal stress in transparent materials. His innovative approach utilizes advanced techniques to enhance the understanding of material properties.

Latest Patents

Xiaoping Ouyang holds a patent for a method of detecting internal stress distribution of transparent material based on X-ray diffraction. This method involves several steps, including establishing coordinates for stress detection positions, processing an initial powder of the transparent material along with a standard reference material, and calculating the placement coordinate position of the standard reference material on the transparent material. The synthesis of a standard reference material-containing transparent material is crucial, as it allows for the detection of internal stress at the specified coordinate position.

Career Highlights

Ouyang is affiliated with Zhejiang University, where he continues to advance research in material science. His work has implications for various applications, including optics and engineering, where understanding stress distribution is vital for performance and safety.

Collaborations

Xiaoping Ouyang collaborates with esteemed colleagues, including Haikuo Wang and Yao Tang, who contribute to his research endeavors. Their combined expertise fosters a productive environment for innovation and discovery.

Conclusion

Xiaoping Ouyang's contributions to the detection of internal stress in transparent materials exemplify the importance of innovation in material science. His patented method not only enhances the understanding of material properties but also paves the way for future advancements in the field.

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