Austin, TX, United States of America

Xiaojian Chu


Average Co-Inventor Count = 13.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Innovations of Xiaojian Chu in Flash Memory Technology

Introduction

Xiaojian Chu is a notable inventor based in Austin, Texas, recognized for his contributions to the field of flash memory technology. With a focus on enhancing the performance and reliability of memory cells, he has developed innovative solutions that address critical challenges in the industry.

Latest Patents

Xiaojian Chu holds a patent titled "Room temperature drift suppression via soft program after erase." This invention provides a method for suppressing room temperature electronic drift in a flash memory cell. The patent describes how a soft program pulse can be applied immediately after an erase pulse to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. By utilizing a relatively low gate voltage, the soft program pulse injects electrons into the flash memory cell, facilitating the rapid combination of uncombined holes associated with the erase pulse. This innovative approach significantly reduces room temperature program state drift, enhancing the overall performance of flash memory devices.

Career Highlights

Xiaojian Chu has made significant strides in his career, particularly through his work at Spansion LLC, a company known for its advancements in flash memory technology. His expertise and innovative mindset have contributed to the development of cutting-edge solutions that address the evolving needs of the industry.

Collaborations

Throughout his career, Xiaojian has collaborated with esteemed colleagues, including Gwyn Robert Jones and Mark W Randolph. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and the development of innovative technologies.

Conclusion

Xiaojian Chu's contributions to flash memory technology, particularly through his patented innovations, have made a significant impact on the industry. His work continues to influence advancements in memory cell performance and reliability.

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