The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Nov. 27, 2007
Gwyn Robert Jones, Sunnyvale, CA (US);
Mark W Randolph, San Jose, CA (US);
John Darilek, Bastrop, TX (US);
Sean O'mullan, Austin, TX (US);
Jacob Marcantel, Dripping Spring, TX (US);
Rick Anundson, Austin, TX (US);
Adam Shackleton, Austin, TX (US);
Xiaojian Chu, Austin, TX (US);
Abhijit Raghunathan, Austin, TX (US);
Asif Arfi, Austin, TX (US);
Gulzar Ahmed Kathawala, Santa Clara, CA (US);
Zhizheng Liu, San Jose, CA (US);
Sung-chul Lee, Cupertino, CA (US);
Gwyn Robert Jones, Sunnyvale, CA (US);
Mark W Randolph, San Jose, CA (US);
John Darilek, Bastrop, TX (US);
Sean O'Mullan, Austin, TX (US);
Jacob Marcantel, Dripping Spring, TX (US);
Rick Anundson, Austin, TX (US);
Adam Shackleton, Austin, TX (US);
Xiaojian Chu, Austin, TX (US);
Abhijit Raghunathan, Austin, TX (US);
Asif Arfi, Austin, TX (US);
Gulzar Ahmed Kathawala, Santa Clara, CA (US);
Zhizheng Liu, San Jose, CA (US);
Sung-Chul Lee, Cupertino, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift.