Shanghai, China

Xiaohu Liu


 

Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014-2025

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3 patents (USPTO):Explore Patents

Title: Innovations by Inventor Xiaohu Liu

Introduction

Xiaohu Liu is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on enhancing the efficiency and reliability of non-volatile memory devices.

Latest Patents

One of his latest patents is titled "Self-learning built-in self-test (BIST) for leak detection in non-volatile memory." This invention involves a process for detecting leaky blocks in NAND or other non-volatile memory devices. It determines a reference value for a block by comparing the current drawn by the peripheral circuitry with a sequence of comparison current values. This method allows for the identification of leaky blocks while minimizing the time required for testing.

Another notable patent is "Memory testing flow set up with computational intelligence." This technology streamlines the testing process during production by accessing a list of test items and their conditions. It compares defects detected by candidate test item conditions with benchmark defects, allowing for the elimination of unnecessary test items and generating an efficient test flow.

Career Highlights

Xiaohu Liu has worked with several notable companies, including SanDisk Technologies Inc. and Shanghai Foreal Optoelectronic Co., Ltd. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Throughout his career, Xiaohu has collaborated with talented individuals such as Cuili Fu and Liang Li. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Xiaohu Liu's contributions to memory technology through his innovative patents demonstrate his commitment to advancing the field. His work not only enhances the performance of memory devices but also sets a foundation for future developments in the industry.

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