Hefei, China

Xiaofei Wu

This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiaofei Wu. Retrieved from https://idiyas.com/inventor/xiaofei-wu-if5i91jc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Xiaofei Wu in Semiconductor Technology

Introduction

Xiaofei Wu is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and a method for fabricating it.

Latest Patents

Xiaofei Wu holds 1 patent for his invention titled "Semiconductor structure and method for fabricating same." This patent discloses a method that includes forming a contact hole on a substrate, creating a first doped layer on the surface of the contact hole, and annealing this layer. The process continues with the formation of at least one second doped layer on the first doped layer, followed by annealing each of these layers. Finally, a third doped layer is formed to fill the contact hole, with specific thickness relationships among the layers to enhance performance.

Career Highlights

Xiaofei Wu is currently employed at Changxin Memory Technologies, Inc., where he applies his expertise in semiconductor fabrication. His work is crucial in advancing the technology used in memory devices.

Collaborations

Xiaofei collaborates with talented coworkers, including Gongyi Wu and Yachao Xu. Their combined efforts contribute to the innovative projects at their company.

Conclusion

Xiaofei Wu's contributions to semiconductor technology exemplify the impact of innovation in the field. His patent reflects a significant advancement in fabrication methods, showcasing his role as a key inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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