Xiao Tian Cheng

Title: Innovations of Inventor Xiao Tian Cheng

Introduction

Xiao Tian Cheng is a notable inventor based in Hubei, China. He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work reflects a commitment to advancing technology and improving device performance.

Latest Patents

Xiao Tian Cheng holds a patent titled "Method for improving channel hole uniformity of a three-dimensional memory device." This patent describes a method for forming a three-dimensional memory device that includes disposing a material layer over a substrate. It involves forming a plurality of channel-forming holes and sacrificial holes in an array-forming region of the material layer. The method also details the formation of semiconductor channels based on the channel-forming holes and at least one gate line slit (GLS) that overlaps with the sacrificial holes.

Career Highlights

Xiao Tian Cheng is currently employed at Yangtze Memory Technologies Co., Ltd. His role at the company allows him to apply his expertise in memory technology and contribute to the development of advanced memory solutions. His innovative approach has positioned him as a key figure in the industry.

Collaborations

Xiao Tian Cheng collaborates with talented individuals such as Li Hong Xiao and Qian Tao. These collaborations enhance the creative process and lead to the development of groundbreaking technologies.

Conclusion

Xiao Tian Cheng's contributions to the field of memory devices through his innovative patent demonstrate his expertise and commitment to technological advancement. His work continues to influence the industry and pave the way for future innovations.