Xuzhou, China

Xiang Yu

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Jiangsu Leuven Instruments Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiang Yu. Retrieved from https://idiyas.com/inventor/xiang-yu-rl7ozwdd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
Loading Chart...
1 patent (USPTO):Explore Patents

Title: Xiang Yu: Inventor of an Ion Beam Etching Machine

Introduction

Xiang Yu is an inventor based in Xuzhou, China. His work includes a patented lower electrode structure for an ion beam etching machine, designed to improve control during the etching process and help prevent damage to the material being processed.

Latest Patents

The provided information lists one patent for Xiang Yu: “Ion Beam Etching Machine and Lower Electrode Structure Thereof.” The invention includes an electrode plate, a ring pressing mechanism that supports the material to be etched, and a lifting mechanism that moves the ring pressing mechanism relative to the electrode plate. A position measurement mechanism measures the ring pressing mechanism’s descent, and the lifting mechanism uses that measurement information to stop its downward movement. This arrangement is intended to reduce fragmentation of the material and improve product yield. Xiang Yu is credited with 1 patent.

Career Highlights

The supplied information associates Xiang Yu with Jiangsu Leuven Instruments Co., Ltd. His patent focuses on the design and operation of equipment used in ion beam etching.

Collaborations

Xiang Yu’s listed coworkers include Chaoquan Yang and Dongdong Hu.

Conclusion

Xiang Yu’s patented electrode structure combines measured positioning with controlled movement to help protect materials during ion beam etching and support improved manufacturing yield.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…