Xiancheng Gao

Title: Xiancheng Gao and a Barium Strontium Titanate Photorefractive Device

Introduction

Xiancheng Gao is an inventor associated with Fuzhou, China, and the Chinese Academy of Sciences. His patent work includes a photorefractive device made from barium strontium titanate (BST) single crystal. The supplied information lists 1 patent for Gao.

Latest Patents

Gao’s listed patent, “Barium strontium titanate photorefractive device and method for making,” describes a device made from a single crystal with a composition substantially represented by Ba₁₋ₓSrₓTiO₃, where 0.01 < x < 0.1. The manufacturing method involves growing the BST crystal using the Czochralski technique, annealing it in an oxidizing atmosphere, machining and polishing it into a cuboid, and mechanically and electrically poling it into a single-domain state.

The device may consist of a piece of the single-domain crystal or an optoelectronic assembly that uses the crystal as its core component. The patent reports performance similar to that of devices made from barium titanate, including reflectivity of up to 52% when used as a self-pumped phase conjugator. It also describes potential manufacturing advantages over barium titanate, including a typical crystal-growth period of three to four days, less demanding equipment and techniques, higher yield, and easier production of larger crystal cuboids.

Career Highlights

The patent connects Gao’s work with research at the Chinese Academy of Sciences and the development of BST-based photorefractive technology. Its focus is both the device’s optical performance and a practical method for producing the single-crystal material.

Collaborations

Xibin Guo and Gansheng Li are identified as Gao’s coworkers.

Conclusion

Xiancheng Gao’s listed patent presents a BST photorefractive device and a manufacturing approach intended to support strong optical performance and more efficient crystal production.