The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1994
Filed:
Feb. 11, 1993
Jian Zhuang, Fuzhou, CN;
Gansheng Li, Fuzhou, CN;
Xiancheng Gao, Fuzhou, CN;
Xibin Guo, Fuzhou, CN;
Yihao Huang, Fuzhou, CN;
Zhenzhu Shi, Fuzhou, CN;
Yaying Weng, Fuzhou, CN;
Jian Lu, Fuzhou, CN;
Abstract
The invention relates to a photorefractive device made of single crystal of which the chemical composition substantially is Ba.sub.1-x Sr.sub.x TiO.sub.3 (0.01<x<0.1 BST) The method for manufacturing said device comprises: growing BST single crystal by Czochralski technique; annealing said crystal in oxidizing atmosphere; machining said crystal into cuboid with polished surfaces; poling said cuboid mechanically and electrically into single-domain state. Said device may ba a piece of said single-domain crystal, or an optoelectronic assembly including at least one of said crystal as the core part. Performances of said device are similar to the one made of BaTiO.sub.3. A reflectivity as high as 52% has been reached using said device as a self-pumped phase conjugator. Compared to BaTiO.sub.3, the method for manufacturing BST crystal according to the invention has advantages such as shorter typical growth period of 3-4 days, simpler requirement for equipment and technique, higher yield, and easier to obtain crystal cuboid with larger dimensions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile