Xavier Teo Leng Seah

Title: Innovations by Xavier Teo Leng Seah

Introduction

Xavier Teo Leng Seah is a notable inventor based in Singapore, recognized for his contributions to the field of non-volatile memory devices. His innovative work has led to the development of a significant patent that addresses challenges in preserving the integrity of dielectric layers during manufacturing processes.

Latest Patents

Xavier holds a patent titled "Method of preserving the top oxide of an ONO dielectric layer via use of a capping material." This invention focuses on methods to protect and increase the thickness of the oxidized silicon nitride component of an ONO layer in non-volatile memory devices. The patent outlines two primary methods for achieving this. The first method involves a silicon nitride layer that is placed over the ONO layer before hydrofluoric acid pre-clean procedures. After the gate oxidation processes, this capping layer is selectively removed. The second method utilizes a polysilicon capping layer, which is also positioned over the ONO layer prior to the same pre-clean procedures. This polysilicon layer is oxidized during subsequent gate oxidation processes, enhancing the ONO layer and ultimately supporting the control gate structure of the non-volatile memory device.

Career Highlights

Xavier Teo Leng Seah is associated with Chartered Semiconductor Manufacturing Ltd, where he has made significant contributions to semiconductor technology. His work has been instrumental in advancing the manufacturing processes of non-volatile memory devices, showcasing his expertise in the field.

Collaborations

Xavier has collaborated with esteemed colleagues such as Chivukula Subrahmanyam and Rajan Rajgopal, further enhancing the innovative environment at Chartered Semiconductor Manufacturing Ltd.

Conclusion

Xavier Teo Leng Seah's innovative contributions to semiconductor technology, particularly in the preservation of dielectric layers, highlight his role as a key inventor in the industry. His patent reflects a significant advancement in the manufacturing of non-volatile memory devices, showcasing his expertise and commitment to innovation.