Company Filing History:
Years Active: 2018-2021
Title: Writam Banerjee: Innovator in Nonvolatile Resistive Memory Technology
Introduction
Writam Banerjee is a prominent inventor based in Beijing, China. He has made significant contributions to the field of nonvolatile resistive memory devices. With a total of 3 patents to his name, Banerjee is recognized for his innovative approaches to memory technology.
Latest Patents
One of his latest patents is focused on a nonvolatile resistive memory device and its manufacturing method. This invention comprises an insulating substrate, a lower electrode, a lower graphene barrier layer, a resistive switching functional layer, an upper graphene barrier layer, and an upper electrode. The design aims to prevent metal ions or atoms from diffusing into the resistive switching functional layer under an applied electric field. By incorporating a monolayer or multilayer graphene film as a barrier layer, the device enhances reliability during the programming or erasing process.
Another notable patent involves a manufacturing method for a nonvolatile resistive switching memory device. This device includes an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode. A graphene intercalation layer with nanopores is strategically placed between the oxidizable metal electrode and the resistive switching functional layer. This configuration controls the entry of metal ions formed by oxidation, allowing them to enter the functional layer only through the nanopores, thereby managing the growth of conductive filaments.
Career Highlights
Writam Banerjee is affiliated with the Chinese Academy of Sciences, where he continues to advance research in memory technology. His work has garnered attention for its potential applications in improving data storage solutions.
Collaborations
Banerjee collaborates with esteemed colleagues, including Ming Liu and Qi Liu, who contribute to his research endeavors.
Conclusion
Writam Banerjee's innovative work in nonvolatile resistive memory technology showcases his commitment to advancing the field. His patents reflect a deep understanding of material science and engineering, positioning him as a key figure in the development of next-generation memory devices.