Chinese Academy of Sciences

Writam Banerjee

Ming Liu

Qi Liu

Hangbing Lv

Kangwei Zhang

Shibing Long

Haitao Sun

Keke Zhang

Haltao Sun

A nonvolatile resistive switching memory comprising an insulating substrate, a lower electrode, a lower graphene barrier layer, a resistive switching functional layer, an upper graphene barrier layer, and an upper electrode, wherein the lower and/or the upper graphene barrier layer is/are capable of preventing the metal ions/atoms in the lower/upper metal electrode from diffusing into the resistive switching functional layer under an applied electric field. According to the nonvolatile resistive switching memory device of the present invention and manufacturing method thereof, a monolayer or multilayer graphene film as a metal ions/atoms barrier layer is inserted between the upper/lower metal electrode and the resistive switching functional layer, which is capable of preventing the metal ions/atoms in the lower/upper metal electrode from diffusing into the resistive switching functional layer during the programming or erasing process of the resistive switching device, thereby improving the reliability of the device.

Nonvolatile resistive memory device and manufacturing method thereof

A nonvolatile resistive switching memory includes an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode. A graphene intercalation layer with nanopores, interposed between the easily oxidizable metal electrode and the resistive switching functional layer, is capable of controlling the metal ions, which are formed by the oxidation of the easily oxidizable metal electrode during the programming of the device, and only enter into the resistive switching functional layer through the position of the nanopores. Further, the graphene intercalation layer with nanopores is capable of blocking the diffusion of the metal ions, making the metal ions, which are formed after the oxidation of the easily oxidizable metal electrode, enter into the resistive switching functional layer only through the position of the nanopores during the programming of the device, thereby controlling the growing position of conductive filament.

Manufacturing method for a nonvolatile resistive switching memory device

A nonvolatile resistive switching memory, comprising an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode, and characterized in that: a graphene barrier layer is inserted between the inert metal electrode and the resistive switching functional layer, which is capable of preventing the easily oxidizable metal ions from migrating into the inert metal electrode through the resistive switching functional layer under the action of electric field during the programming of the device. The manufacturing method therefore comprises adding a monolayer or multilayer graphene thin film between the inert electrode and the solid-state electrolyte resistive switching functional layer which services as a metal ion barrier layer to stop electrically-conductive metal filaments formed in the resistive switching layer from diffusing into the inert electrode layer during a RRAM device programming process, eliminating erroneous programming phenomenon occurring during the erasing process, improving device reliability.

Nonvolatile resistive switching memory device and manufacturing method thereof

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Beijing, China

Writam Banerjee