Sejong, South Korea

Woonhyung Shim

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Display Co., Ltd.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Woonhyung Shim. Retrieved from https://idiyas.com/inventor/woonhyung-shim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Woonhyung Shim: Patent Work in Display Technology.

Introduction

Woonhyung Shim is an inventor based in Sejong, South Korea. His patent work includes an etchant composition designed for manufacturing metal patterns and array substrates.

Latest Patents

The provided information lists one patent for Shim: “Etchant Composition, and Method for Manufacturing Metal Pattern and Array Substrate Using the Same.” The invention describes an etchant containing a persulfate, a four-nitrogen ring compound, a carbonyl ring compound with two or more carbonyl groups, and water. It specifies a weight ratio of about 1:0.1 to about 1:2 for the four-nitrogen ring compound and the carbonyl ring compound. The composition can etch titanium/copper multilayers and is intended to help produce metal patterns and array substrates with excellent etched-pattern properties. Shim’s listed portfolio comprises 1 patent.

Career Highlights

Shim is associated with Samsung Display Co., Ltd. His listed patent focuses on materials and manufacturing methods relevant to display components.

Collaborations

The provided information names Seungbo Shim and Bong-Kyun Kim as Shim’s coworkers.

Conclusion

Woonhyung Shim’s listed invention addresses etching titanium/copper multilayers for the manufacture of metal patterns and array substrates, reflecting his connection to display technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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