San Jose, CA, United States of America

Woojin Kim

This inventor holds 1 USPTO granted patent. Top assignee: Avalanche Technology, Inc.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Woojin Kim. Retrieved from https://idiyas.com/inventor/woojin-kim-5p38grey

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Woojin Kim - Innovator in Magnetic Memory Technology

Introduction

Woojin Kim is a prominent inventor based in San Jose, California. He has made significant contributions to the field of magnetic memory technology, particularly through his innovative patent.

Latest Patents

Woojin Kim holds a patent for a technology titled "Cross-point MRAM including self-compliance selector." This invention focuses on a magnetic memory cell that incorporates a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector. The MTJ memory element consists of a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer. The two-terminal bidirectional selector features a bottom electrode, a top electrode, and a load-resistance layer made of tantalum oxide, among other components.

Career Highlights

Woojin Kim is currently employed at Avalanche Technology, Inc., where he continues to advance his research and development in magnetic memory technologies. His work has positioned him as a key figure in the industry.

Collaborations

Some of his notable coworkers include Zhiqiang Wei and Kimihiro Satoh, who have collaborated with him on various projects within the company.

Conclusion

Woojin Kim's innovative work in magnetic memory technology exemplifies the advancements being made in the field. His contributions, particularly through his patent, highlight the importance of research and development in creating cutting-edge memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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