Company Filing History:
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1 out of 2,340 
Years Active: 1999-2001
Title: The Innovations of Won-Suck Yang
Introduction
Won-Suck Yang is a notable inventor based in Cheongju, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of memory cell structures for DRAM devices. With a total of two patents to his name, Yang's work reflects a high degree of innovation and technical expertise.
Latest Patents
Yang's latest patents focus on a memory cell structure for semiconductor memory devices. The first patent describes a memory cell structure suitable for DRAM memory devices with a capacity of 256M or more, requiring a very high degree of integration. The process involves forming sequentially first and second random layers on a semiconductor substrate, patterning a first photoresist layer, and using it as a mask to pattern the second random layer. The method continues with the removal of the first photoresist layer and the patterning of a second photoresist layer, followed by the patterning of the first random layer. The second random layer and the second photoresist layer are then removed. The second patent is essentially a reiteration of the first, emphasizing the same innovative steps and applications.
Career Highlights
Throughout his career, Won-Suck Yang has worked with prominent companies in the semiconductor industry. He has been associated with LG Semicon Co., Ltd. and Hyundai Electronics Industries Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Yang has collaborated with various professionals in his field, including his coworker Chang-Jae Lee. These collaborations have likely enhanced his work and contributed to the advancements in semiconductor memory technology.
Conclusion
Won-Suck Yang's contributions to semiconductor technology, particularly in memory cell structures, showcase his innovative spirit and technical prowess. His patents reflect a commitment to advancing the capabilities of DRAM memory devices, making him a significant figure in the field.