The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1999
Filed:
Dec. 24, 1996
Chang-Jae Lee, Cheongju, KR;
Won-Suck Yang, Cheongju, KR;
LG Semicon Co., Ltd., Choongcheongbuk-Do, KR;
Abstract
A memory cell structure for a semiconductor memory device and fabricating method thereof, which is suitable for DRAM memory devices of 256M or more capacity requiring a very high degree of integration, which comprises the steps of forming sequentially first and second random layers on a semiconductor substrate; patterning a first photoresist layer having a limited line width on the second random layer; patterning the second random layer using as a mask the patterned first photoresist layer; removing the first photoresist layer, and then patterning the second photoresist layer having the limited line width between the pattern of the second random layer; patterning the first random layer using as a mask the second photoresist layer which is so patterned so as to be placed between the pattern of the second random layer; and removing the second random layer and the second photoresist layer.