Suwon-si, South Korea

Won Keun Chung

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Won Keun Chung. Retrieved from https://idiyas.com/inventor/won-keun-chung-orlw7fq7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Won Keun Chung and Semiconductor Device Innovation.

Introduction

Won Keun Chung is an inventor associated with Suwon-si, South Korea, and Samsung Electronics Ltd. His work includes a patent for a semiconductor device that integrates backside wiring and source/drain contact structures.

Latest Patents

Chung is named on 1 patent, titled “Semiconductor device.” The invention describes a device with a backside wiring line, a fin-type pattern, and a gate electrode. A backside source/drain contact connects the wiring line to a source/drain pattern. The contact includes upper and lower patterns, with the upper pattern positioned between the lower pattern and the source/drain pattern and formed as a single conductive film structure.

Career Highlights

Chung’s patent reflects work on semiconductor device architecture, particularly backside wiring and contact arrangements. The disclosed structure brings together fin-type patterns, insulating films, and source/drain contacts.

Collaborations

Geun Woo Kim and Jun Ki Park are identified as Chung’s coworkers. Their names are associated with the professional context provided for his work at Samsung Electronics Ltd.

Conclusion

Won Keun Chung’s patent focuses on a semiconductor device design that connects backside wiring to a source/drain pattern through a structured contact, highlighting his contribution to semiconductor innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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