The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Feb. 14, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Won Keun Chung, Suwon-si, KR;
Geun Woo Kim, Suwon-si, KR;
Jun Ki Park, Suwon-si, KR;
Wan Don Kim, Suwon-si, KR;
Hyo Seok Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device may include a backside wiring line in a first backside interlayer insulating film, a fin-type pattern on the backside wiring line, a second backside interlayer insulating film between the fin-type pattern and the first backside interlayer insulating film, a gate electrode on the fin-type pattern, a first source/drain pattern on a side of the gate electrode, and a backside source/drain contact in a backside contact hole defined by the fin-type pattern and the second backside interlayer insulating film. The backside source/drain contact may connect the backside wiring line and the first source/drain pattern. The backside source/drain contact may include an upper pattern and a lower pattern. The upper pattern may be between the lower pattern and the first source/drain pattern, and may fill at least a portion of the first backside contact hole. The upper pattern may have a single conductive film structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile