Seosan, South Korea

Won Jae Lee

This inventor holds 1 USPTO granted patent. Top assignee: Korea Institute of Science and Technology. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Won Jae Lee. Retrieved from https://idiyas.com/inventor/won-jae-lee-buoqep12

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Innovations of Won Jae Lee in Semiconductor Technology.

Introduction

Won Jae Lee is a notable inventor based in Seosan, South Korea. He has made significant contributions to the field of semiconductor technology. His work focuses on developing materials that enhance the performance of p-type semiconductors.

Latest Patents

Won Jae Lee holds a patent for a "Paste for ohmic contact to P-type semiconductor and method for forming ohmic contact to P-type semiconductor using the same." This patent involves a paste that includes a metal oxide and a binder, specifically utilizing rhenium oxide or molybdenum oxide. This innovation is crucial for improving the efficiency and reliability of semiconductor devices.

Career Highlights

He is affiliated with the Korea Institute of Science and Technology, where he conducts research and development in semiconductor materials. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Some of his notable coworkers include Seung Hyub Baek and Narendra Singh Parmar. Their collaborative efforts contribute to advancing research in semiconductor technology.

Conclusion

Won Jae Lee's innovative work in semiconductor technology, particularly his patented paste for ohmic contact, showcases his commitment to enhancing electronic materials. His contributions are vital for the future of semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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