The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2020
Filed:
May. 29, 2018
Applicant:
Korea Institute of Science and Technology, Seoul, KR;
Inventors:
Ji-Won Choi, Seoul, KR;
Jin Sang Kim, Seoul, KR;
Chong Yun Kang, Seoul, KR;
Seong Keun Kim, Seoul, KR;
Seung Hyub Baek, Seoul, KR;
Sang Tae Kim, Seoul, KR;
Won Jae Lee, Seosan-si, KR;
Narendra Singh Parmar, Seoul, KR;
Young-Shin Lee, Seoul, KR;
Assignee:
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/22 (2006.01); H01L 29/20 (2006.01); H01L 21/288 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); C08L 29/04 (2006.01); C08K 3/22 (2006.01);
U.S. Cl.
CPC ...
H01B 1/22 (2013.01); H01L 21/288 (2013.01); H01L 21/28512 (2013.01); H01L 21/28575 (2013.01); H01L 29/2003 (2013.01); H01L 29/452 (2013.01); C08K 2003/2255 (2013.01); C08K 2201/001 (2013.01); C08L 29/04 (2013.01);
Abstract
The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.