Austin, TX, United States of America

Winston S Blackley

This inventor holds 1 USPTO granted patent. Top assignee: Cirrus Logic Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Winston S Blackley. Retrieved from https://idiyas.com/inventor/winston-s-blackley

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Winston S. Blackley: Innovator in Integrated Circuit Technology

Introduction

Winston S. Blackley is a notable inventor based in Austin, TX (US). He has made significant contributions to the field of integrated circuit technology. His innovative work focuses on reducing the effects of hydrogen absorption in semiconductor devices.

Latest Patents

Winston S. Blackley holds a patent for an integrated circuit with a getter layer for hydrogen entrapment. This patent describes a manufacturing process for integrated circuit substrates that mitigates time-dependent device characteristic variations caused by hydrogen absorption. The method involves forming or mounting devices on a semiconductor wafer, creating semiconductor structures, and incorporating getter layers to reduce hydrogen absorption. This advancement leads to wafers with semiconductor dies that exhibit improved performance and reliability.

Career Highlights

Winston S. Blackley is associated with Cirrus Logic Inc., where he applies his expertise in semiconductor technology. His work at the company has contributed to advancements in integrated circuit design and manufacturing processes.

Collaborations

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Conclusion

Winston S. Blackley is a prominent figure in the field of integrated circuits, with a focus on innovative solutions to enhance device performance. His contributions continue to impact the semiconductor industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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