Tipp City, OH, United States of America

William V Lampert

This inventor holds 2 USPTO granted patents. Top assignee: United States of America as Represented by the Secretary of the Air Force. Active years: 2000-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William V Lampert. Retrieved from https://idiyas.com/inventor/william-v-lampert-vhb1unn2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 30(Granted Patents)


Company Filing History:


Years Active: 2000-2007

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2 patents (USPTO):Explore Patents

Title: The Innovations of William V. Lampert

Introduction

William V. Lampert is an accomplished inventor based in Tipp City, Ohio. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for growing silicon carbide and creating sensitive magnetoresistive sensing devices. With a total of 2 patents, Lampert's work has implications for various applications in electronics and materials science.

Latest Patents

One of Lampert's latest patents is titled "Method of Growing Homoepitaxial Silicon Carbide." This innovative method involves charging a first crucible with a quantity of carbon and coating a second crucible with a layer of silicon carbide. The second crucible is then charged with solid silicon. These crucibles are installed into effusion cells within a molecular beam epitaxy (MBE) growth chamber. A substrate is prepared, cleaned, and polished before being loaded into the chamber. The substrate and effusion cells are heated, allowing a layer of silicon carbide to be grown onto the substrate.

Another notable patent is the "Solid State Magnetic Field Sensor Method." This method describes the creation of a magnetoresistive sensing device by depositing an ultrathin active film that responds to changes in magnetic field energy onto a compliant layer of group III-V semiconductor material. This compliant layer retains strain energy from the layering of semiconductor materials with different lattice constants. The resulting device is battery operable and highly sensitive to changes in magnetic field flux.

Career Highlights

William V. Lampert works for the United States of America as represented by the Secretary of the Air Force. His role involves advancing technologies that are crucial for national defense and aerospace applications. His expertise in semiconductor materials and device fabrication has positioned him as a key contributor in his field.

Collaborations

Lampert has collaborated with notable colleagues, including Matthew L. Seaford and Kurt G. Eyink. These collaborations have fostered innovation and have led to advancements in the technologies they work on together.

Conclusion

William V. Lampert's contributions to semiconductor technology through his patents and work with the United States Air Force highlight his importance as an inventor. His innovative methods for growing silicon carbide and developing sensitive sensing devices continue to influence the field of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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