The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2007
Filed:
Jan. 13, 2002
William V. Lampert, Tipp City, OH (US);
Christopher J. Eiting, Brandon, FL (US);
Scott A. Smith, Keene, NH (US);
Trice W. Haas, Dayton, OH (US);
William V. Lampert, Tipp City, OH (US);
Christopher J. Eiting, Brandon, FL (US);
Scott A. Smith, Keene, NH (US);
Trice W. Haas, Dayton, OH (US);
The United States of America as represented by the Secretary of the Air Force, Washington, DC (US);
Abstract
A method of growing a SiC film within an MBE system is disclosed. The method includes charging a first crucible with a quality of C, and coating a second crucible with a layer of SiC. The second crucible is charged with a quantity of solid Si. The crucibles are installed into first and second effusion cells which are placed within the MBE growth chamber. A substrate is prepared by cleaning and polishing and loaded into the MBE growth chamber. The substrate and effusion cells are heated and a layer of SiC is grown by MBE onto the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile