Company Filing History:
Years Active: 1976
Title: The Innovations of William M. Regitz
Introduction
William M. Regitz is a notable inventor based in Cupertino, California. He is recognized for his contributions to the field of memory technology, particularly in the development of high-speed memory systems. His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.
Latest Patents
One of Regitz's significant patents is for a high-speed ECL compatible MOS-RAM. This invention is a metal-oxide-silicon (MOS) random-access memory (RAM) that is emitter-coupled logic (ECL) compatible. It operates without the need for high-level clock inputs, utilizing pseudo-static cells that are refreshed with an asynchronous charge-pump signal generated on the memory chip. The design incorporates buffers that use the ECL reference signal to ensure compatibility, and it employs dynamic decoding across two separate levels of decoding.
Career Highlights
William M. Regitz has made substantial contributions to the field of semiconductor technology during his career. He is currently associated with Intel Corporation, where he continues to innovate and develop cutting-edge memory solutions. His work has been instrumental in advancing the capabilities of modern computing systems.
Collaborations
Throughout his career, Regitz has collaborated with several talented individuals, including John Gionis and Mark S. Ebel. These collaborations have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.
Conclusion
William M. Regitz's contributions to the field of memory technology exemplify the spirit of innovation. His work on high-speed ECL compatible MOS-RAM has paved the way for advancements in electronic memory systems. His ongoing efforts at Intel Corporation continue to influence the future of technology.