William H White

Title: The Innovations of William H. White

Introduction

William H. White is a notable inventor based in Indialantic, Florida, recognized for his contributions to the field of radiation-hardened CMOS technology. With a total of four patents to his name, he has made significant advancements in semiconductor fabrication techniques.

Latest Patents

William H. White's latest patents include innovative methods for creating radiation-hardened self-aligned CMOS devices. One of his patents describes a process that involves applying a radiation-hard gate oxide layer on a silicon substrate, followed by the application of silicon-doped aluminum gates. The method also includes ion implanting and annealing source and drain regions using the gates as masks at temperatures of or below 500 degrees centigrade. Additionally, a P+ guard ring is formed at the interface of the P- well of the N-channel MOS device and the N- substrate before the formation of the gate oxide.

Career Highlights

William H. White has had a distinguished career at Harris Corporation, where he has been instrumental in developing advanced semiconductor technologies. His work has not only contributed to the company's success but has also pushed the boundaries of what is possible in the field of electronics.

Collaborations

Throughout his career, William has collaborated with notable colleagues, including Thomas J. Sanders and Wales Dale Edwards. These partnerships have fostered innovation and have led to the successful development of several key technologies.

Conclusion

William H. White's contributions to the field of radiation-hardened CMOS technology exemplify his dedication to innovation and excellence. His work continues to influence the semiconductor industry and showcases the importance of collaboration in driving technological advancements.