Exeter, NH, United States of America

William G Goodenough

This inventor holds 1 USPTO granted patent. Top assignee: Varian Semiconductor Equipment Associates, Inc.. Active years: 2003.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: The Innovations of William G. Goodenough

Introduction

William G. Goodenough is a notable inventor based in Exeter, NH (US). He has made significant contributions to the field of semiconductor equipment, particularly in the operation of ion implanters. His innovative approach has led to advancements in the efficiency of charged particle accelerators.

Latest Patents

Goodenough holds a patent for "Methods and apparatus for operating high energy accelerator in low energy mode." This patent describes methods and apparatus that enable the efficient operation of an ion implanter, which includes a charged particle accelerator functioning in both high and low energy modes. The design incorporates a high voltage power supply, an accelerator column with multiple electrodes, and a switching assembly that optimizes performance while minimizing space charge expansion of the beam.

Career Highlights

Goodenough is associated with Varian Semiconductor Equipment Associates, Inc., where he has applied his expertise in semiconductor technology. His work has been instrumental in enhancing the capabilities of ion implantation processes, which are critical in the manufacturing of semiconductor devices.

Collaborations

Throughout his career, Goodenough has collaborated with esteemed colleagues such as Bjorn O. Pedersen and Peter E. Maciejowski. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

William G. Goodenough's contributions to the field of semiconductor technology and his innovative patent demonstrate his commitment to advancing the industry. His work continues to influence the efficiency of ion implantation processes, showcasing the importance of innovation in technology.

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