Vancouver, WA, United States of America

William Charles Pesklak


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: The Innovations of William Charles Pesklak

Introduction

William Charles Pesklak is an accomplished inventor based in Vancouver, WA (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of epitaxial layer thickness measurement. His work has implications for the manufacturing and quality control of silicon wafers used in various electronic applications.

Latest Patents

Pesklak holds a patent for an "Apparatus and method for determining an epitaxial layer thickness." This invention provides a method for determining the epitaxial layer thickness and transition width in epitaxial single crystal silicon wafers. The apparatus includes an isotopically enriched doped substrate, and the method employs Second Ion Mass Spectrometry (SIMS) to accurately measure the epitaxial layer thickness and transition width.

Career Highlights

Pesklak is currently associated with SEH America, Inc., where he continues to innovate in the semiconductor industry. His expertise in epitaxial processes has positioned him as a valuable asset to his company and the broader field of semiconductor research.

Collaborations

Pesklak has worked alongside Bruce Laurence Colburn, contributing to advancements in their shared field of expertise. Their collaboration has fostered innovation and development in semiconductor technologies.

Conclusion

William Charles Pesklak's contributions to the field of semiconductor technology, particularly through his patent on epitaxial layer measurement, highlight his role as an influential inventor. His work continues to impact the industry positively.

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