The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Jun. 13, 1997
Applicant:
Inventors:
William Charles Pesklak, Vancouver, WA (US);
Bruce Laurence Colburn, Vancouver, WA (US);
Assignee:
Seh America, Inc., Vancouver, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 84 ; 117 85 ; 117 88 ; 117-2 ; 117 96 ; 117928 ; 117835 ; 148 33 ; 148331 ;
Abstract
An apparatus for and a method of determining the epitaxial layer thickness and transition width in epitaxial single crystal silicon wafers are provided. The apparatus provides an epitaxial single crystal silicon wafer comprising an isotopically enriched doped substrate. The method involves a process of applying Second Ion Mass Spectrometry (SIMS) to the isotopically enriched doped wafer for determining its epitaxial layer thickness and transition width.
Pesklak, William. (1999). Apparatus and method for determining an epitaxial layer thickness and (U.S. Patent No. 5891242). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5891242
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile