Company Filing History:
Years Active: 2005
Title: The Innovations of William C. Hicks: Sputter Deposition Techniques
Introduction: William C. Hicks, an inventive mind located in Gaston, Oregon, has made significant contributions to the field of materials science through his work at Intel Corporation. With his single patent focused on a unique method of sputter deposition, Hicks stands out as a key innovator in the application of advanced materials technology.
Latest Patents: Hicks' patent, titled "Method to Sputter Deposit Metal on a Ferroelectric Polymer," introduces novel methods of depositing various metal layers adjacent to a ferroelectric polymer layer. This innovation emphasizes the use of a collimator during the sputtering process, which serves to filter out charged particles from the metal layer being deposited. The patent also encompasses embodiments where the metal layer can include intermetallic, amorphous intermetallic, and amorphized intermetallic layers, revealing a multifaceted approach to improving material deposition techniques.
Career Highlights: Working at Intel Corporation, one of the leading technology companies in the world, Hicks has honed his skills in developing cutting-edge technologies. His expertise in sputtering techniques has contributed to advancements in the creation of electronic components, ensuring greater efficiency and enhanced performance in devices.
Collaborations: Hicks has worked alongside talented professionals, including Hitesh Windlass and Ebrahim Andideh. Their collaborative efforts highlight the importance of teamwork in the innovation process, enabling the exchange of ideas and fostering advancements in technology.
Conclusion: William C. Hicks exemplifies the spirit of innovation through his contributions to sputter deposition methods. His work not only reflects a deep understanding of material science but also demonstrates the potential for practical applications that can revolutionize the industry. As technology continues to evolve, Hicks' patent may pave the way for further developments in ferroelectric polymers and metal deposition techniques.