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For the Inventor, By the Inventor

Woodbridge, VA, United States of America

William A Gutierrez

USPTO Granted Patents = 12

Average Co-Inventor Count = 2.1

ph-index = 9

Forward Citations = 203(Granted Patents)


Company Filing History:

goldMedal12 out of 8,684 
 
US Government As Represented by the Secretary of the Army
 patents

Years Active: 1976-1987

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12 patents (USPTO):Explore Patents
1. 4644221 - Variable sensitivity transmission mode negative electron affinity (1987-02-17),
2. 4589192 - Hybrid epitaxial growth process (1986-05-20),
3. 4498225 - Method of forming variable sensitivity transmission mode negative (1985-02-12),
4. 4477294 - Method of forming GaAs on Al.sub.y Ga.sub.1-y As transmission mode (1984-10-16),
5. 4286373 - Method of making negative electron affinity photocathode (1981-09-01),
6. 4273596 - Method of preparing a monolithic intrinsic infrared focal plane charge (1981-06-16),
7. 4228365 - Monolithic infrared focal plane charge coupled device imager (1980-10-14),
8. 4008106 - Method of fabricating III-V photocathodes (1977-02-15),
9. 3972750 - Electron emitter and method of fabrication (1976-08-03),
10. 3959038 - Electron emitter and method of fabrication (1976-05-25),
11. 3959037 - Electron emitter and method of fabrication (1976-05-25),
12. 3951698 - Dual use of epitaxy seed crystal as tube input window and cathode (1976-04-20),

Title: The Innovations of William A. Gutierrez

Introduction

William A. Gutierrez is a notable inventor based in Woodbridge, Virginia, with a remarkable portfolio of 12 patents. His work primarily focuses on advancements in photocathode technology and infrared detectors, contributing significantly to the field of electronics and photonics.

Latest Patents

Among his latest patents is the "Variable Sensitivity Transmission Mode Negative Electron Affinity," which describes a method for forming a photocathode that can adjust its sensitivity to light. This innovation allows for the variation of the backsurface recombination velocity of the photoemitting material using an electric field. The basic structure of this photocathode consists of a Group III-V element photoemitter on a larger bandgap Group III-V element window substrate. Another significant patent is the "Hybrid Epitaxial Growth Process," which outlines a method for creating infrared detectors on substrates of mercury cadmium telluride (HgCdTe) or mercury zinc telluride (HgZnTe). This process includes preparing, etching, and passivating the substrate before placing it in an ultra-high vacuum environment for molecular beam epitaxy.

Career Highlights

William A. Gutierrez has made substantial contributions to the U.S. Government as represented by the Secretary of the Army. His innovative work has played a crucial role in enhancing the capabilities of various electronic systems used by the military.

Collaborations

Throughout his career, Gutierrez has collaborated with esteemed colleagues such as Herbert L. Wilson and John H. Pollard. These partnerships have fostered a collaborative environment that has led to significant advancements in their respective fields.

Conclusion

William A. Gutierrez stands out as a prominent inventor whose contributions to photocathode technology and infrared detectors have made a lasting impact. His innovative spirit and dedication to research continue to inspire advancements in technology.

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