The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 1984
Filed:
Jun. 22, 1983
Applicant:
Inventors:
William A Gutierrez, Woodbridge, VA (US);
Herbert L Wilson, Woodbridge, VA (US);
Assignee:
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148171 ; 148172 ; 29572 ;
Abstract
A method of forming a high sensitivity, large area, negative electron affty (NEA), infrared sensitive transmission mode, GaAs on AlGaAs photocathode structure with the GaAs layer being of controlled homogeneous thickness and having a blemish-free surface. The structure is formed by using a combination of liquid and vapor phase epitaxial techniques, i.e., hybrid epitaxy.