US Government As Represented by the Secretary of the Army

William A Gutierrez

Herbert L Wilson

John H Pollard

Edward M Yee

John H Dinan

A method of forming a variable sensitivity transmission mode negative eleon affinity (NEA) photocathode in which the sensitivity of the photocathode to white or monochromatic light can be varied by varying the backsurface recombination velocity of the photoemitting material with an electric field. The basic structure of the photocathode is comprised of a Group III-V element photoemitter on a larger bandgap Group III-V element window substrate.

Variable sensitivity transmission mode negative electron affinity

A method of making infrared detectors on a substrate of mercury cadmium turide (HgCdTe) or mercury zinc telluride (HgZnTe). The steps include those of preparing the substrate, etching and passivating it, and placing it in the ultra-high vaccuum environment of a molecular beam epitaxy apparatus. While in the apparatus, one or more layers of zinc cadmium telluride (ZnCdTe) are deposited. When the ZnCdTe deposition is finished, the substrate is removed from the apparatus and the detectors are delineated lithographically.

Hybrid epitaxial growth process

Method of forming variable sensitivity transmission mode negative

A method of forming a high sensitivity, large area, negative electron affty (NEA), infrared sensitive transmission mode, GaAs on AlGaAs photocathode structure with the GaAs layer being of controlled homogeneous thickness and having a blemish-free surface. The structure is formed by using a combination of liquid and vapor phase epitaxial techniques, i.e., hybrid epitaxy.

Method of forming GaAs on Al.sub.y Ga.sub.1-y As transmission mode

A method of making transmission mode glass-sealed negative electron affinity (NEA) gallium arsenide (GaAs) photocathodes, utilizing germanium (Ge) as the seed crystal and multilayers of GaAs and gallium aluminum arsenide (GaAlAs) grown by metal alkyl-hydride vapor-phase epitaxy. The GaAs serves as the photoemitting layer and the GaAlAs serves as the passivating layer. The Ge, GaAs,GaAlAs combination is sealed to a glass support substrate which serves as the input window for the device. Finally, the Ge is removed and the GaAs is activated.

Method of making negative electron affinity photocathode

An infrared (IR) detector device comprised of a solid state, radiation ha and high resolution monolithic IR focal plane array for imaging applications. The monolithic IR focal plane array has a heterostructure injection scheme that prevents charged-coupled device (CCD) 'well filling' by using a heterojunction barrier between the absorber, or detector layer, and the transfer layer. Injection of signal charge into a CCD multiplexer is controlled by establishing a punch through condition between the absorber layer and the CCD channel. The detector layer and the CCD multiplexer are on different planes of the focal plane array.

Method of preparing a monolithic intrinsic infrared focal plane charge

An infrared (IR) detector device comprised of a solid state, radiation ha and high resolution monolithic IR focal plane array for imaging applications. The monolithic IR focal plane array has a heterostructure injection scheme that prevents charge coupled device (CCD) 'well filling' by using a heterojunction barrier between the absorber, or detector layer, and the transfer layer. Injection of signal charge into a CCD multiplexer is controlled by establishing a punch through condition between the absorber layer and the CCD channel. The detector layer and the CCD multiplexer are on different planes of the focal plane array.

Monolithic infrared focal plane charge coupled device imager

A method of fabricating high performance transmission mode negative elect affinity III-V compound photocathodes which eliminates recurrent liquid phase epitaxial growth surface defects and solves the 'wipe-off' problem incurred during the termination of the growth cycle.

Method of fabricating III-V photocathodes

Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes with a technique for the fabrication thereof, utilizing multilayers of GaAs and gallium aluminum arsenide (GaAlAs) wherein the GaAs layers serve as the emitting layer and as intermediate construction layers and the GaAlAs layer serves as a passivating window.

Electron emitter and method of fabrication

Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes with a technique for the fabrication thereof, utilizing multilayers of GaAs and gallium aluminum arsenide (GaAlAs) wherein the GaAs layers serve as the emitting layer and as an intermediate construction layer, and the GaAlAs layers serve as a passivating window and as an etch stop layer.

Transmission mode negative electron affinity gallium arsenide (GaAs) photthodes and dynodes and techniques for the fabrication thereof, utilizing multilayers of GaAs and gallium alluminum arsenide (GaAlAs) wherein the GaAs layer serves as the emitting layer and the GaAlAs serves as an intermediate construction layer and/or as an integral part of the component.

A photon sensing device utilizing a III-V negative electron affinity photthode grown on a window substrate support which simultaneously serves as a support and growth surface for the epitaxial growth of suitable cathode layers as well as the input window for the device.

Growing community of inventors

Woodbridge, VA, United States of America

William A Gutierrez