Nabburg, Germany

Werner Irlbacher

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2017

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: Werner Irlbacher: Innovator in Polysilicon Resistor Technology

Introduction

Werner Irlbacher is a notable inventor based in Nabburg, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of polysilicon resistors. His innovative approach has led to advancements that are crucial for various electronic applications.

Latest Patents

Irlbacher holds a patent for "Methods for producing polysilicon resistors." This patent outlines a method for producing a polysilicon resistor device, which includes forming a polysilicon layer, implanting first dopant atoms into the polysilicon layer, implanting second dopant atoms, and annealing the polysilicon layer. This process enhances the performance and reliability of polysilicon resistors in electronic devices.

Career Highlights

Werner Irlbacher is associated with Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to apply his innovative ideas in a practical setting, contributing to the company's reputation for excellence in technology.

Collaborations

Irlbacher has collaborated with notable colleagues such as Hermann Gruber and Thomas Gross. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Werner Irlbacher's contributions to polysilicon resistor technology exemplify the impact of innovation in the semiconductor industry. His patent and work at Infineon Technologies AG highlight his role as a key player in advancing electronic components.

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